Substrate holders are located on rotating drum. The system is equipped with 4 pairs of magnetron units, so sputter deposition is performed in wertical direction on the inner side and the outer side of substrates. The system's vacuum chamber has a specific door equipped with two heaters and an ion source.
Magnetron units of the system are capable for sputtering any material, including resistive alloys of Cu, Cr, Ni, Al, etc.
Technical specification:
The number of substrates processed for one sputtering cycle, double-sided |
70 pcs. 60x48 |
processing, mm: |
48 pcs. 0100, 28 pcs. 0150; |
single-sided processing, mm: |
111 pcs. 60x48 |
Automatic shutter control; at the same time shutters can be open for deposition either at even positions (2 and 4) or at odd positions (1 and 3) |
|
Working gas consumption for each channel, l/hour |
0÷9 |
The number of working gases (non-aggressive) |
up to 3 |
Cleaning modules |
1 |
Magnetron units |
up to 7 |
Magnetron type (for film deposition) |
mid-frenquency pulsed |
Magnetron working current, controlled, A |
3÷30 |
Magnetron voltage, V |
300÷650 |
Targets dimensions (indirectly cooled complex targets can be used), mm |
440x100x6÷15 |
Allowed pressure in sputtering chamber, Pa |
0,07÷0,3 |
The witness piece of substrate resistance range, kn |
0,2÷20 |
Resistivity measurement uncertainty,% |
±1 |
Substrates temperature Instability, % |
±5 |
Recommended temperature of substrates (°C, max 700) |
50÷250 (350 optional) |
Umiting residual pressure in working chamber, Pa |
8x10-4 |
Total system start-up time including cryopump warm-up, min |
< 120 |
Overall dimensions of the system, with lifted chamber (width x depth x height), mm |
1750x2000x2980 |
Total weight, including power and control units, kg |
<2300 |