Automated magnetron deposition system Caroline D12С

The number of substrates processed for one sputtering cycle, double-sided

96 pcs. ∅100 176 pcs.60x48

Automatic shutter control for all targets

Working gas consumption for each channel, l/hour

0÷9

The number of working gases (non-aggressive)

up to 3

Ion cleaning module

1

Magnetron units

up to 4

Magnetron type (for film deposition)

mid-frenquency pulsed

Magnetron working current, controlled, A

0,5÷15 (30-optional)

Magnetron voltage, V

up to 650

Targets dimensions (indirectly cooled complex targets can be used), mm

749x100x6÷15

Allowed pressure in sputtering chamber, Pa

0,07÷0,3

Bias generator power, kVA

4

Bias sputtering on the cooled substrate (pulsing frequency 100 kHz)

Optional

The witness piece of substrate resistance range, kn

0,2÷20

Resistivity measurement uncertainty,%

±1

Substrates temperature Instability, %

±5

Recommended temperature of substrates (°C, max 700)

50÷250 (350 optional)

Limiting residual pressure in working chamber, Pa

8x10^-4

Total system start-up time including cryopump warm-up, min

< 120

Overall dimensions of the system, with lifted chamber (width x depth x height), mm

1450x1660x3130

Total weight, including power and control units, kg

<1850