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Home/Participants/Products/Transistor-P2 Development and pilot lot production of a series of high-power MOS transistors (Low charge, Trench) in TO-251 and TO-252 metal-plastic packages

Transistor-P2 Development and pilot lot production of a series of high-power MOS transistors (Low charge, Trench) in TO-251 and TO-252 metal-plastic packages

Transistor-P2 Development and pilot lot production of a series of high-power MOS transistors (Low charge, Trench) in TO-251 and TO-252 metal-plastic packages Manufacturer: Angstrem PJSC
 Contact name: Kanunnikov Vladimir
Email: frolova@angstrem.ru
Phone: +7 (499) 720 80 36
Website: www.angstrem.ru

Main Purpose:

secondary power supplies

synchronous rectifier systems

switching systems

electric actuators

Technical characteristics and functional parameters:

  • Series of MOS transistors with USImax = 30V … 600V;

  • Temperature range: –60 °C ÷ +125 °C.

Competitive advantages:

  • Angstrem brand guarantees the quality and reliability of our output products

  • Scheduled times of shipment

  • Competitive price ensured by our in-house development

  •  Low on-state drain-source resistance

  • 100% monitoring of resistance to avalanche discharge energy 

  • Trenchtechnology

  •  Low gate charge (LowCharge)


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