Substrate holders are located on rotating drum. Magnetron units (up to 4) are placed inside the drum and sputter deposition is performed invertical direction.
Magnetron units of the system are capable for sputtering any material, including resistive alloys ofCu, Cr, Ni,AI, etc.
Technical specification:
The number of substrates processed for one sputtering cycle |
48 pcs. ∅100, 28 pcs. ∅150, 111 pcs. 60x48 |
Automatic shutter control for all targets |
|
Working gas consumption for each channel, 1/hour |
0÷9 |
The number of working gases (non-aggressive) |
up to 3 |
Cleaning module |
1 |
Magnetron units |
up to 4 |
Magnetron type (for film deposition) |
mid-frenquency pulsed |
Magnetron working current, controlled, A |
0,5÷15 (optional 30) |
Magnetron voltage, V |
<650 |
Targets dimensions (Indirectly cooled complex targets can be used), mm |
440x100x6÷15 |
Allowed pressure in sputtering chamber, Pa |
0,07÷0,3 |
The witness piece of substrate resistance range, kO |
0,2÷20 |
Resistivity measurement uncertainty,% |
±1 |
Recommended temperature of substrates (°C, max 300) |
50÷250 |
Substrates temperature instability, % |
±5 |
Umiting residual pressure in working chamber, Pa |
8x10-4 |
Total system start-up time including cryopump warm-up, min |
120 |
Overall dimensions of the system, with lifted chamber (width x depth x height, mm) |
1450x1850x2550 |
Total weight, including power and control units, kg |
< 1700 |